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Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
physica status solidi (a), Wiley, 04-2020, 217; 7, 1900760Compte-rendu et recension critique d'ouvragetexte intégral -
MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Cabourg, 17-06-2019Autre communication scientifique (congrès sans actes - poster - séminaire...)