Parcourir Liste des unités par auteur "Kuzmik, J."
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Current conduction and saturation mechanism in AlGaN/GaN ungated structures
Kuzmik, J.; Bychikhin, S.; Pogany, D.; et al.Journal of Applied Physics, American Institute of Physics, 2006, 99, 123720-1-7Compte-rendu et recension critique d'ouvragetexte intégral -
InAlN-based HEMT for microwave applications
Delage, S.L.; Sarazin, N.; Di Forte-Poisson, M.A.; et al.8th Topical Workshop on Heterostructure Microelectronics, TWHN 2009, Nagano, 2009Autre communication scientifique (congrès sans actes - poster - séminaire...) -
InAlN/GaN heterostructures for microwave power and beyond
Kohn, E.; Alomari, M.; Denisenko, A.; et al.International Electron Devices Meeting, IEDM 2009, 2009, Proceedings of the 2009 International Electron Devices Meeting, IEDM 2009, _, 2009Communication dans un congrès avec actes -
Influence of surface trapping on determination of electron saturation velocity in AlGaN/GaN heterostructure
Kuzmik, J.; Bychikhin, S.; Pichonat, Emmanuelle; et al.28th International Conference of the Physics of Semiconductors, Vienne, 07-2006Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
Kuzmik, J.; Bychikhin, S.; Pogany, D.; et al.American Institute of Physics, 2007Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods
Kuzmik, J.; Bychikhin, S.; Pogany, D.; et al.Journal of Applied Physics, American Institute of Physics, 2007, 101, 054508-1-6Compte-rendu et recension critique d'ouvragetexte intégral -
Microwave power capabilities of InAlN/GaN HEMTs
De Jaeger, Jean-Claude; Gaquiere, Christophe; Douvry, Y.; et al.18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, Vilnius, 2010, Proceedings of the 18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, 2010Communication dans un congrès avec actes -
Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier
Kuzmik, J.; Ostermaier, C.; Pozzovivo, G.; et al.IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 2144-2154Compte-rendu et recension critique d'ouvrage -
Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs
Kuzmik, J.; Ostermaier, C.; Pozzovivo, G.; et al.8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, _, 2010Communication dans un congrès avec actes -
Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET
Kuzmik, J.; Bychikhin, S.; Pichonat, Emmanuelle; et al.International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association, 2009, 1, 153-160Compte-rendu et recension critique d'ouvrage -
Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scaterring spectroscopy and transient interferometric mapping
Pichonat, Emmanuelle; Kuzmik, J.; Bychikhin, S.; et al.Proceedings of the first European Microwave Integrated Circuits Conference, Manchester, 09-2006Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping
Pichonat, Emmanuelle; Kuzmik, J.; Bychikhin, S.; et al.1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, Proceedings of the 2006 1st European Microwave Integrated Circuits Conference, EuMIC 2006, IEEE, Piscataway, NJ, USA, 2006Communication dans un congrès avec actes -
Thermal characterization of HF power FETS
Pogany, D.; Kuzmik, J.; Bychikhin, S.; et al.Target days, Frascati, 10-2006Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
Kuzmik, J.; Bychikhin, S.; Pogany, D.; et al.Journal of Applied Physics, American Institute of Physics, 2011, 109; 8, 086106Compte-rendu et recension critique d'ouvragetexte intégral -
Thermal characterization of MBE-grown GaN/AlGaN/GaN on single crystalline diamond
Kuzmik, J.; Bychikhin, S.; Pichonat, Emmanuelle; et al.6th International Workshop on Nitride Semiconductors, IWN2010, Tampa, FL, 2010Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Thermal measurements of microwave transistors and MMICs within TARGET NoE
Teyssier, J.P.; Sommet, Raphaël; Pogany, D.; et al.TARGET Days : from Ideas to Results, in the frame of the International Conference ISMOT-2007, Roma, 2007Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges
Kuzmik, J.; Bychikhin, S.; Lossy, R.; et al.Solid-State Electronics, Elsevier, 2007, 51, 969-974Compte-rendu et recension critique d'ouvragetexte intégral -
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
Ostermaier, C.; Pozzovivo, G.; Carlin, J.F.; et al.IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, 1030-1032Compte-rendu et recension critique d'ouvrage