Reverse Leakage Current Hysteresis in GaN ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
Author(s) :
Peña, R. [Auteur]
Universidad de Alcalá - University of Alcalá [UAH]
Orfao, B. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Íñiguez-De-La-Torre, I. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Paz, G. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Abou Daher, Mahmoud [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roelens, Yannick [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Zaknoune, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Mateos, J. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
González, T. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Vasallo, B. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, S. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Universidad de Alcalá - University of Alcalá [UAH]
Orfao, B. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Íñiguez-De-La-Torre, I. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Paz, G. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Abou Daher, Mahmoud [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roelens, Yannick [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Zaknoune, Mohammed [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Mateos, J. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
González, T. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Vasallo, B. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, S. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Journal title :
IEEE Transactions on Electron Devices
Pages :
4524-4529
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2024-08
ISSN :
0018-9383
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
The hysteresis cycles observed in the reverse leakage current measured at low temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied and interpreted in terms of trap-assisted tunneling (TAT) ...
Show more >The hysteresis cycles observed in the reverse leakage current measured at low temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied and interpreted in terms of trap-assisted tunneling (TAT) compatible with the existence of a trap energy band (TEB) near the metal-semiconductor interface. The analysis of the energies for which the maximum tunneling current occurs, both direct and through this trap band, allows us to explain the behaviors found at different temperatures. Starting from empty trap states by previous illumination, transient current measurements performed under different preconditioning voltages evidence a progressive partial filling/release of the trap energy levels, confirmed as well by pulsed measurements. Captured/released electrons modify the number of trap states available for tunneling and thus the current level. As a consequence, tunneling processes in the go and return paths take place through levels with different occupations within the TEB, originating the hysteresis cycle.Show less >
Show more >The hysteresis cycles observed in the reverse leakage current measured at low temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied and interpreted in terms of trap-assisted tunneling (TAT) compatible with the existence of a trap energy band (TEB) near the metal-semiconductor interface. The analysis of the energies for which the maximum tunneling current occurs, both direct and through this trap band, allows us to explain the behaviors found at different temperatures. Starting from empty trap states by previous illumination, transient current measurements performed under different preconditioning voltages evidence a progressive partial filling/release of the trap energy levels, confirmed as well by pulsed measurements. Captured/released electrons modify the number of trap states available for tunneling and thus the current level. As a consequence, tunneling processes in the go and return paths take place through levels with different occupations within the TEB, originating the hysteresis cycle.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :