Title :

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Author(s) :

Passi, Vikram [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Sodervall, Ulf [Auteur]
Chalmers University of Technology [Göteborg]
Nilsson, Bengt [Auteur]
Chalmers University of Technology [Göteborg]
Petersson, Goran [Auteur]
Chalmers University of Technology [Göteborg]
Hagberg, Mats [Auteur]
Chalmers University of Technology [Göteborg]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Du Bois, Bert [Auteur]
IMEC [IMEC]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]

Journal title :

MICROELECTRONIC ENGINEERING

Pages :

83-89

Publisher :

Elsevier

Publication date :

2012-07-01

ISSN :

0167-9317

English keyword(s) :

Implantation of silicon oxide; Vapor phase hydrofluoric acid release; Wet release; Process modeling; Anisotropic etching modeling

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted ...
Show more >Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.Show less >

Language :

Anglais

Popular science :

Non

European Project :

Silicon-based nanostructures and nanodevices for long term nanoelectronics applications

Comment :

6 pages

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL