Ferroelectric Control of Organic/Ferromagnetic ...
Document type :
Article dans une revue scientifique
DOI :
Permalink :
Title :
Ferroelectric Control of Organic/Ferromagnetic Spinterface
Author(s) :
Liang, Shiheng [Auteur]
Yang, Hongxin [Auteur]
Yang, Huaiwen [Auteur]
Tao, Bingshan [Auteur]
Djeffal, Abdelhak [Auteur]
Chshiev, Mairbek [Auteur]
Huang, Weichuan [Auteur]
Li, Xiaoguang [Auteur]
Ferri, Anthony [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Desfeux, Rachel [Auteur]
Mangin, Stéphane [Auteur]
Lacour, Daniel [Auteur]
Hehn, Michel [Auteur]
Copie, Olivier [Auteur]
Dumesnil, Karine [Auteur]
Lu, Yuan [Auteur]
Yang, Hongxin [Auteur]
Yang, Huaiwen [Auteur]
Tao, Bingshan [Auteur]
Djeffal, Abdelhak [Auteur]
Chshiev, Mairbek [Auteur]
Huang, Weichuan [Auteur]
Li, Xiaoguang [Auteur]
Ferri, Anthony [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Desfeux, Rachel [Auteur]

Mangin, Stéphane [Auteur]
Lacour, Daniel [Auteur]
Hehn, Michel [Auteur]
Copie, Olivier [Auteur]
Dumesnil, Karine [Auteur]
Lu, Yuan [Auteur]
Journal title :
Advanced Materials
Publication date :
2016-10-06
HAL domain(s) :
Chimie/Chimie inorganique
English abstract : [en]
Organic multiferroic tunnel junctions based on La0.6Sr0.4MnO3/poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric ...
Show more >Organic multiferroic tunnel junctions based on La0.6Sr0.4MnO3/poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.Show less >
Show more >Organic multiferroic tunnel junctions based on La0.6Sr0.4MnO3/poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
ENSCL
CNRS
Centrale Lille
Univ. Artois
Université de Lille
CNRS
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Research team(s) :
Couches minces & nanomatériaux (CMNM)
Submission date :
2019-09-25T14:05:11Z