Synthesis and electrical properties of ...
Document type :
Article dans une revue scientifique
Permalink :
Title :
Synthesis and electrical properties of lead-free piezoelectric Bi 0.5 Na 0.5 TiO 3 thin films prepared by Sol-Gel method
Author(s) :
Dargham, S. Abou [Auteur]
Ponchel, Freddy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abboud, N. [Auteur]
Soueidan, M. [Auteur]
Ferri, Anthony [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Desfeux, Rachel [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Assaad, Jamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaouk, D. [Auteur]
Ponchel, Freddy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abboud, N. [Auteur]
Soueidan, M. [Auteur]
Ferri, Anthony [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Desfeux, Rachel [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Assaad, Jamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaouk, D. [Auteur]
Journal title :
Journal of the European Ceramic Society
Volume number :
38
Pages :
1450-1455
Publisher :
Elsevier
Publication date :
2018-04
English keyword(s) :
Piezoelectric
Lead-Free
Sol-Gel
Thin films
BNT
Lead-Free
Sol-Gel
Thin films
BNT
HAL domain(s) :
Chimie/Chimie inorganique
English abstract : [en]
Lead-free Bi0.5Na0.5TiO3 (BNT) piezoelectric thin films were deposited on Pt/TiOx/SiO2/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at ...
Show more >Lead-free Bi0.5Na0.5TiO3 (BNT) piezoelectric thin films were deposited on Pt/TiOx/SiO2/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm2 and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.Show less >
Show more >Lead-free Bi0.5Na0.5TiO3 (BNT) piezoelectric thin films were deposited on Pt/TiOx/SiO2/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm2 and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
ISEN
Univ. Valenciennes
ENSCL
CNRS
Institut Catholique Lille
Centrale Lille
Univ. Artois
Université de Lille
Univ. Valenciennes
ENSCL
CNRS
Institut Catholique Lille
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Research team(s) :
Couches minces & nanomatériaux (CMNM)
Submission date :
2019-09-25T14:37:47Z
2021-03-12T13:39:36Z
2021-03-12T13:39:36Z