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Theoretical investigation of the phonon-limited carrier mobility in (001) Si films
Journal of Applied Physics, American Institute of Physics, 2016, 120; 17, 174301Compte-rendu et recension critique d'ouvragetexte intégral -
Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 07-2015, 14; 4, 768-775Compte-rendu et recension critique d'ouvrage -
Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 92; 7, 075414Compte-rendu et recension critique d'ouvragetexte intégral -
Drift velocity versus electric field in < 110 > Si nanowires: Strong confinement effects
Applied Physics Letters, American Institute of Physics, 2015, 107; 6, 063103Compte-rendu et recension critique d'ouvragetexte intégral -
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, 26-01-2015, IEEE -
Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons
Physical Review Letters, American Physical Society, 2016, 116; 23, 236602Compte-rendu et recension critique d'ouvrage