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Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors
Nanotechnology, Institute of Physics, 12-04-2019, 30; 15, 155301Compte-rendu et recension critique d'ouvrage -
Anderson localization induced by gauge-invariant bond-sign disorder in square PbSe nanocrystal lattices
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 17-09-2018, 98; 12Compte-rendu et recension critique d'ouvragetexte intégral -
Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
Journal of Crystal Growth, Elsevier, 04-2019, 512, 11-15Compte-rendu et recension critique d'ouvragetexte intégral -
Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls
Nanotechnology, Institute of Physics, 05-2019, 30; 32, 324002Compte-rendu et recension critique d'ouvrage -
Influence of doping level and surface states in tunneling spectroscopy of an In<sub>0.53</sub>Ga<sub>0.47</sub>As quantum well grown on p-type doped InP(001)
Physical Review Materials, American Physical Society, 20-09-2019, 3; 9Compte-rendu et recension critique d'ouvragetexte intégral -
Topological protection of electronic states against disorder probed by their magnetic moment
Physical Review B, American Physical Society, 2017, 95; 23, 235426Compte-rendu et recension critique d'ouvragetexte intégral -
Dirac antidot superlattices for electrons in III-V semiconductors
37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, Nice, 27-05-2019 -
[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells
5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Chengdu, 08-04-2021, Proceedings of the 5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, IEEE, 04-2021Communication dans un congrès avec actestexte intégral -
Engineering a robust flat band in III-V semiconductor heterostructures
Nano Letters, American Chemical Society, 13-01-2021, 21, 680Compte-rendu et recension critique d'ouvragetexte intégral -
Towards III-V semiconductor-based artificial graphene
Compound Semiconductor Week2021, CSW 2021, May 2021, Stockholm, Suède., Stockholm, 09-05-2021