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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage -
Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
Journal of Crystal Growth, Elsevier, 11-2019, 526, 125235Compte-rendu et recension critique d'ouvragefulltext
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Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si
Journal of Micromechanics and Microengineering, IOP Publishing, 2016, 26; 10, 105015Compte-rendu et recension critique d'ouvragefulltext
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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
physica status solidi (a), Wiley, 2018, 215; 9, -Compte-rendu et recension critique d'ouvragefulltext
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AlGaN/GaN HEMTs on AlN substrate for power electronics
44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Bristol (virtual), 14-06-2021, 14-06-2021Communication dans un congrès avec actesfulltext
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[Invited] From research to production: how MBE can unlock GaN-on-Si technology
The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sheffield, 04-09-2022, 05-09-2022Autre communication scientifique (congrès sans actes - poster - séminaire...)Communication dans un congrès avec actesfulltext
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[Webinar] Towards high performance mm-wave GaN power transistors
pCoE - GaN Research and Development (GRAND) Webinar Series, Online, 21-04-2022 -
Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
European Conference on Renewable Energy Systems (ECRES 2022), Istanbul, 07-05-2022, 2022Autre communication scientifique (congrès sans actes - poster - séminaire...)Communication dans un congrès avec actesfulltext