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Résultats 1-8 de 8
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Development of time-resolved UV micro-Raman spectroscopy to measure temperature in AlGaN/GaN HEMTs
Elsevier, 2010Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose
Elsevier, 2010Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy
Elsevier, 2011Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction
2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, 20-06-2017, Proceedings of International Conference on Noise and Fluctuations (ICNF) 2017, IEEE -
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence
Elsevier, 2012Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose
Elsevier, 11-2010Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Transistors à effet de champ sur GaN pour applications de puissance et à haute température
GDR Matériaux Grand Gap, Aussois, 1999Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Nonlinear characterization and modeling of carbon nanotube field-effect transistors
Institute of Electrical and Electronics Engineers, 2008Autre communication scientifique (congrès sans actes - poster - séminaire...)