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Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 04-2015, 36; 4, 303-305Compte-rendu et recension critique d'ouvrage -
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Semiconductor Science and Technology, IOP Publishing, 03-2017, 32; 3, 035011, 8 pagesCompte-rendu et recension critique d'ouvrage