Diffusion mechanism of bound Schottky ...
Document type :
Article dans une revue scientifique: Article original
Permalink :
Title :
Diffusion mechanism of bound Schottky defect in magnesium oxide
Author(s) :
Mahmoud, Sami [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Carrez, Philippe [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Landeiro Dos Reis, Marie [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mousseau, Normand [Auteur]
Regroupement Québécois sur les Matériaux de Pointe [RQMP]
Département de Physique [Montréal]
Cordier, Patrick [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Institut universitaire de France [IUF]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Carrez, Philippe [Auteur]

Unité Matériaux et Transformations - UMR 8207 [UMET]
Landeiro Dos Reis, Marie [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mousseau, Normand [Auteur]
Regroupement Québécois sur les Matériaux de Pointe [RQMP]
Département de Physique [Montréal]
Cordier, Patrick [Auteur]

Unité Matériaux et Transformations - UMR 8207 [UMET]
Institut universitaire de France [IUF]
Journal title :
Physical Review Materials
Abbreviated title :
Phys. Rev. Materials
Volume number :
5
Pages :
033609
Publisher :
American Physical Society (APS)
Publication date :
2021-03-25
ISSN :
2475-9953
English keyword(s) :
Point defects
Self-diffusion
Self-diffusion
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Planète et Univers [physics]/Sciences de la Terre
Planète et Univers [physics]/Sciences de la Terre
English abstract : [en]
In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since ...
Show more >In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the stable configuration of the Schottky defect corresponds to a bound pair of vacancies of opposite signs. In this study, we investigate the kinetics of formation and migration of such a bound pair on long timescales reaching in some cases thousands of seconds using the kinetic activation-relaxation technique, an off-lattice kinetic Monte Carlo method with an event catalog built on-the-fly during static molecular simulations. We show that the diffusion of this bound Schottky defect involves the migration of vacancies bounded to the first and third neighbor sites of the crystal structure with an apparent migration energy which cannot be inferred from the migration energies expected from isolated defects. Overall, this study gives insights and constraints on the oxygen diffusion mechanism reported experimentally in high-purity MgO samples.Show less >
Show more >In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the stable configuration of the Schottky defect corresponds to a bound pair of vacancies of opposite signs. In this study, we investigate the kinetics of formation and migration of such a bound pair on long timescales reaching in some cases thousands of seconds using the kinetic activation-relaxation technique, an off-lattice kinetic Monte Carlo method with an event catalog built on-the-fly during static molecular simulations. We show that the diffusion of this bound Schottky defect involves the migration of vacancies bounded to the first and third neighbor sites of the crystal structure with an apparent migration energy which cannot be inferred from the migration energies expected from isolated defects. Overall, this study gives insights and constraints on the oxygen diffusion mechanism reported experimentally in high-purity MgO samples.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
European Project :
Administrative institution(s) :
Université de Lille
CNRS
INRA
ENSCL
CNRS
INRA
ENSCL
Collections :
Research team(s) :
Plasticité
Submission date :
2021-03-26T10:09:12Z
2021-03-26T15:45:00Z
2021-03-26T15:45:00Z