Degradation of InGaN-based MQW photodetectors ...
Document type :
Communication dans un congrès avec actes
Title :
Degradation of InGaN-based MQW photodetectors under 405 nm laser excitation
Author(s) :
de Santi, Carlo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Caria, Alessandro [Auteur]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zanoni, Enrico [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Caria, Alessandro [Auteur]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zanoni, Enrico [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Conference title :
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2017
City :
Bordeaux
Country :
France
Start date of the conference :
2017-09-25
Journal title :
Microelectronics Reliability
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Within this paper we analyze the reliability of 25x multi quantum well InGaN-based devices, designed to be used as high power photodetectors or in multi-junction solar cells. Under stress with monochromatic excitation at ...
Show more >Within this paper we analyze the reliability of 25x multi quantum well InGaN-based devices, designed to be used as high power photodetectors or in multi-junction solar cells. Under stress with monochromatic excitation at 405 nm by means of a laser diode, we detect degradation at optical power levels significantly above the common AM1.5 spectrum; the main degradation modes are a reduction in short circuit current and in open circuit voltage, and an improvement in fill factor. The analysis of the wavelength-dependent EQE highlights, as a consequence of stress, the increase in concentration of a deep level compatible with the yellow luminescence in gallium nitride, suggesting that gallium vacancies may play a role in the degradation of the detectors.Show less >
Show more >Within this paper we analyze the reliability of 25x multi quantum well InGaN-based devices, designed to be used as high power photodetectors or in multi-junction solar cells. Under stress with monochromatic excitation at 405 nm by means of a laser diode, we detect degradation at optical power levels significantly above the common AM1.5 spectrum; the main degradation modes are a reduction in short circuit current and in open circuit voltage, and an improvement in fill factor. The analysis of the wavelength-dependent EQE highlights, as a consequence of stress, the increase in concentration of a deep level compatible with the yellow luminescence in gallium nitride, suggesting that gallium vacancies may play a role in the degradation of the detectors.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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