Current status and challenges of GaN millimeter-wave transistors

Kabouche, Riad; Pecheux, Romain; Zegaoui, Malek; Medjdoub, Farid

[Invited]

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Title :

Current status and challenges of GaN millimeter-wave transistors
[Invited]

Author(s) :

Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pecheux, Romain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

GaN Marathon 2.0

City :

Padova

Country :

Italie

Start date of the conference :

2018-04-18

English keyword(s) :

GaN transistors
millimeter-wave
power
efficiency
robustness

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥ 20 V) will be possible while ...
Show more >In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥ 20 V) will be possible while using short gate length only if the thermal resistance induced by the buffer layers is reduced. In particular, it is shown that a thick AlGaN back barrier (DHFET structure) results in a huge drop of the PAE at VDS = 25V despite the pulsed mode conditions. With an enhanced thermal dissipation as compared to the DHFET, the carbon-doped structure delivers much higher performances illustrated by a state-of-the-art combination of PAE (> 50%) and an output power density of 7 W/mm at 40 GHz and VDS = 25V.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :