Title :

A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

Author(s) :

Goncalves, Joao Carlos Azevedo []
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quemerais, Thomas [Auteur]
Gloria, Daniel [Auteur]
Avenier, Gregory [Auteur]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquière, Christophe [Auteur]
Danneville, Francois [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

International Conference on Microelectronic Test Structures (ICMTS)

City :

Grenoble

Country :

France

Start date of the conference :

2017-03-27

Book title :

International Conference on Microelectronic Test Structures (ICMTS)

Publisher :

IEEE

Publication date :

2017

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche ...
Show more >In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to -6 V. When biased around this breakdown voltage ( their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved in D-band. Hence, because of its ability to be integrated within a Si process, one can strongly expect the use of this solid state noise source for high frequency in-situ noise characterization of advanced Si CMOS or BiCMOS technologies, with the aim to target millimeter-wave applications.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL