A 130 to 170 GHz integrated noise source ...
Document type :
Communication dans un congrès avec actes
Title :
A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
Author(s) :
Goncalves, Joao Carlos Azevedo []
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quemerais, Thomas [Auteur]
Gloria, Daniel [Auteur]
Avenier, Gregory [Auteur]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquière, Christophe [Auteur]
Danneville, Francois [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quemerais, Thomas [Auteur]
Gloria, Daniel [Auteur]
Avenier, Gregory [Auteur]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquière, Christophe [Auteur]
Danneville, Francois [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
International Conference on Microelectronic Test Structures (ICMTS)
City :
Grenoble
Country :
France
Start date of the conference :
2017-03-27
Book title :
International Conference on Microelectronic Test Structures (ICMTS)
Publisher :
IEEE
Publication date :
2017
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche ...
Show more >In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to -6 V. When biased around this breakdown voltage ( their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved in D-band. Hence, because of its ability to be integrated within a Si process, one can strongly expect the use of this solid state noise source for high frequency in-situ noise characterization of advanced Si CMOS or BiCMOS technologies, with the aim to target millimeter-wave applications.Show less >
Show more >In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to -6 V. When biased around this breakdown voltage ( their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved in D-band. Hence, because of its ability to be integrated within a Si process, one can strongly expect the use of this solid state noise source for high frequency in-situ noise characterization of advanced Si CMOS or BiCMOS technologies, with the aim to target millimeter-wave applications.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :