Gigahertz frequency graphene transistor, ...
Document type :
Communication dans un congrès avec actes
Title :
Gigahertz frequency graphene transistor, high yield process and good stability under strain
Author(s) :
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mhedhbi, S. [Auteur]
Salk, S. [Auteur]
Levert, T. [Auteur]
Txoperena, O. [Auteur]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mhedhbi, S. [Auteur]
Salk, S. [Auteur]
Levert, T. [Auteur]
Txoperena, O. [Auteur]
Pallecchi, Emiliano [Auteur]

Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]

Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
14th European Microwave Integrated Circuits Conference, EuMIC 2019
City :
Paris
Country :
France
Start date of the conference :
2019-09-30
Journal title :
Proceedings of 14th European Microwave Integrated Circuits Conference, EuMIC 2019
Publisher :
IEEE
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width ...
Show more >We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12µm,24µm and 50µm) are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.Show less >
Show more >We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12µm,24µm and 50µm) are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :