Title :

Design and Simulation of InGaN/GaN p-i-n Photodiodes

Author(s) :

Elbar, Mourad [Auteur]
Université Mohamed Khider de Biskra [BISKRA]
Alshehri, Bandar [Auteur]
Tobbeche, Souad [Auteur]
Université Mohamed Khider de Biskra [BISKRA]
Dogheche, El Hadj [Auteur]

Journal title :

physica status solidi (a)

Pages :

1700521

Publisher :

Wiley

Publication date :

2018-05-09

ISSN :

0031-8965

HAL domain(s) :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]

English abstract : [en]

InGaN ternary alloys with their band gaps varying from 0.7 to 3.4eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco-Atlas software, an In0.1Ga0.9N/GaN based p-i-n ...
Show more >InGaN ternary alloys with their band gaps varying from 0.7 to 3.4eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco-Atlas software, an In0.1Ga0.9N/GaN based p-i-n photodiode is designed and the J-V characteristics, the spectral responsivity, the frequency response and the cut-off frequency as a function of InGaN thickness are studied. The photodiode exhibits a high reverse breakdown voltage of 38V, a peak responsivity of 0.2AW(-1) at 0.343m wavelength and a cutoff frequency of 400MHz under an applied reverse bias voltage of 2V and for a 0.1m i-InGaN layer, in good agreement with simulated and experimental results found in literature. It is found that an optimum i-layer thickness of 1.5m for the maximum cutoff frequency of 4GHz attributed to the predominance of the limitation in capacitance effect on the cutoff frequency at low i-layer thickness and the transit time on the cuttoff frequency for high i-layer thickness. For this i-layer thickness, the highest peak responsivity about 0.244AW(-1) at 0.384m wavelength is achieved.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

JIF=1.606

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL