Title :

A parametric technique for trap characterization in AlGaN/GaN HEMTs

Author(s) :

Duffy, Steven [Auteur]
Liverpool John Morres University - LJMU (UK)
Benbakhti, Brahim [Auteur]
Liverpool John Morres University - LJMU (UK)
Zhang, Wei [Auteur]
Liverpool John Morres University - LJMU (UK)
Ahmeda, Khaled [Auteur]
Cardiff Metropolitan University
Kalna, Karol [Auteur]
Swansea University
Boucherta, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mattalah, Maghnia [Auteur]
Université Saad Dahleb [Blida, Algeria]
Chahdi, Hassane Ouazzani [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Bourzgui, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]

Journal title :

IEEE Transactions on Electron Devices

Pages :

1924-1930

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2020-04-01

ISSN :

0018-9383

English keyword(s) :

HEMTs
MODFETs
Logic gates
Aluminum gallium nitride
Wide band gap semiconductors
Degradation
Transient analysis

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and ...
Show more >A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge-trapping mechanisms are identified: 1) bulk charge trapping occurring on a timescale of less than 1 ms and 2) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge-trapping time constant is found to be independent of both drain (V DS ) and gate (V GS ) biases. Surface charge trapping is found to have a much greater impact on slow degradation than bulk trapping and self-heating. At a short timescale (<; 1 ms), the RF performance is mainly restricted by both bulk charge-trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic ON-resistance degradation is predominantly limited by surface charge trapping.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL