Sputtered tungsten nitride films as ...
Document type :
Article dans une revue scientifique: Article original
Title :
Sputtered tungsten nitride films as pseudocapacitive electrode for on chip micro-supercapacitors
Author(s) :
Ouendi, Saliha [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Robert, Kevin [Auteur]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Stiévenard, Didier [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Brousse, Thierry [Auteur]
Institut des Matériaux Jean Rouxel [IMN]
Roussel, Pascal [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Lethien, Christophe [Auteur]
Réseau sur le stockage électrochimique de l'énergie [RS2E]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Robert, Kevin [Auteur]

Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Stiévenard, Didier [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Brousse, Thierry [Auteur]
Institut des Matériaux Jean Rouxel [IMN]
Roussel, Pascal [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Lethien, Christophe [Auteur]

Réseau sur le stockage électrochimique de l'énergie [RS2E]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Energy Storage Materials
Pages :
243-252
Publisher :
Elsevier
Publication date :
2019-07
ISSN :
2405-8297
English keyword(s) :
Tungsten nitride
Pseudocapacitance
Sputtering
AFM
Micro-supercapacitor
Pseudocapacitance
Sputtering
AFM
Micro-supercapacitor
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
AbstractMicro-supercapacitors, a class of miniaturized electrochemical capacitors, are an attractive solution to power smart and connected sensors for Internet of Thing (IoT) applications. Unfortunately, to propose on chip ...
Show more >AbstractMicro-supercapacitors, a class of miniaturized electrochemical capacitors, are an attractive solution to power smart and connected sensors for Internet of Thing (IoT) applications. Unfortunately, to propose on chip micro-supercapacitors with high technological readiness level, the deposition of electrode materials on large-scale substrate is challenging from microelectronic industry point of view. To fulfill the IoT needs and semiconductor industry requirements, the sputtering deposition of transition metal nitride was investigated in the framework of this paper. Bi-functional tungsten nitride films were sputtered on silicon wafer and were investigated both as a current collector and as an electrode material. Atomic Force Microscopy technique was used to evaluate the specific surface of the sputtered films. 7.9 μm-thick W2N films exhibits a specific surface of 75 cm2 per cm2 footprint area and thus it exhibits capacitance values up to 0.55 F cm−2 and more than 700 F cm−3 in 1 M KOH aqueous electrolyte.Show less >
Show more >AbstractMicro-supercapacitors, a class of miniaturized electrochemical capacitors, are an attractive solution to power smart and connected sensors for Internet of Thing (IoT) applications. Unfortunately, to propose on chip micro-supercapacitors with high technological readiness level, the deposition of electrode materials on large-scale substrate is challenging from microelectronic industry point of view. To fulfill the IoT needs and semiconductor industry requirements, the sputtering deposition of transition metal nitride was investigated in the framework of this paper. Bi-functional tungsten nitride films were sputtered on silicon wafer and were investigated both as a current collector and as an electrode material. Atomic Force Microscopy technique was used to evaluate the specific surface of the sputtered films. 7.9 μm-thick W2N films exhibits a specific surface of 75 cm2 per cm2 footprint area and thus it exhibits capacitance values up to 0.55 F cm−2 and more than 700 F cm−3 in 1 M KOH aqueous electrolyte.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :
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