Vertical multilayer structures based on ...
Document type :
Article dans une revue scientifique
DOI :
Title :
Vertical multilayer structures based on porous silicon layers for mid-infrared applications
Author(s) :
Raiah, Warda [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Coffinier, Yannick [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
NanoBioInterfaces - IEMN [NBI - IEMN]
Thomy, Vincent [Auteur]
Bio-Micro-Electro-Mechanical Systems - IEMN [BIOMEMS - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duris, Maxime [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Guendouz, Mohammed [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Lorrain, Nathalie [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Pirasteh, Parastesh [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Bodiou, Loïc [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Charrier, Joël [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Coffinier, Yannick [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
NanoBioInterfaces - IEMN [NBI - IEMN]
Thomy, Vincent [Auteur]

Bio-Micro-Electro-Mechanical Systems - IEMN [BIOMEMS - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duris, Maxime [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Guendouz, Mohammed [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Lorrain, Nathalie [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Pirasteh, Parastesh [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Bodiou, Loïc [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Charrier, Joël [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [Institut FOTON]
Journal title :
Optical Materials Express
Pages :
1921-1930
Publisher :
OSA pub
Publication date :
2020-08-01
ISSN :
2159-3930
HAL domain(s) :
Sciences de l'ingénieur [physics]/Optique / photonique
English abstract : [en]
In this work, the fabrication of a porous silicon Bragg reflector and vertical cavity on P+ silicon substrate is investigated for applications in spectroscopic sensing in the mid-infrared (Mid-IR) wavelength range. The ...
Show more >In this work, the fabrication of a porous silicon Bragg reflector and vertical cavity on P+ silicon substrate is investigated for applications in spectroscopic sensing in the mid-infrared (Mid-IR) wavelength range. The complex refractive index of porous silicon layers is measured. Optical vertical devices are then fabricated and characterized by Fourier transform infrared (FTIR) spectrophotometry. This work demonstrates the use of electrochemically prepared Bragg reflectors with reflectance as high as 99% and vertical cavity based on porous silicon layers operating in the mid-IR spectral region (up to 8 µm). Experimental reflectance spectra of the vertical cavity structures are recorded as a function of air exposure duration after thermal annealing under nitrogen flux (N2) and results demonstrate that these structures could be used for spectroscopic sensing applications in the mid-IR (2-8 µm) by grafting specific biomolecules on the porous silicon internal surface.Show less >
Show more >In this work, the fabrication of a porous silicon Bragg reflector and vertical cavity on P+ silicon substrate is investigated for applications in spectroscopic sensing in the mid-infrared (Mid-IR) wavelength range. The complex refractive index of porous silicon layers is measured. Optical vertical devices are then fabricated and characterized by Fourier transform infrared (FTIR) spectrophotometry. This work demonstrates the use of electrochemically prepared Bragg reflectors with reflectance as high as 99% and vertical cavity based on porous silicon layers operating in the mid-IR spectral region (up to 8 µm). Experimental reflectance spectra of the vertical cavity structures are recorded as a function of air exposure duration after thermal annealing under nitrogen flux (N2) and results demonstrate that these structures could be used for spectroscopic sensing applications in the mid-IR (2-8 µm) by grafting specific biomolecules on the porous silicon internal surface.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :
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