Short-term reliability of high performance ...
Document type :
Communication dans un congrès avec actes
Title :
Short-term reliability of high performance Q-band AlN/GaN HEMTs
Author(s) :
Kabouche, R. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Harrouche, K. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Harrouche, K. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
IEEE International Reliability Physics Symposium (IRPS 2020)
City :
Dallas, TX
Country :
Etats-Unis d'Amérique
Start date of the conference :
2020-04-28
Book title :
2020 IEEE International Reliability Physics Symposium (IRPS)
Journal title :
Proceedinfs of 2020 IEEE International Reliability Physics Symposium (IRPS)
Publisher :
IEEE
Publication date :
2020
English keyword(s) :
GaN
HEMTs
output power density (Pout)
power added efficiency (PAE)
Q-band
on-wafer short-term reliability
HEMTs
output power density (Pout)
power added efficiency (PAE)
Q-band
on-wafer short-term reliability
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. ...
Show more >We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. It is found that the barrier thickness in this highly strain heterostructure has a major impact on the device reliability. The superior robustness when using thinner barrier (closer to the critical thickness) is attributed to the reduced strain.Show less >
Show more >We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. It is found that the barrier thickness in this highly strain heterostructure has a major impact on the device reliability. The superior robustness when using thinner barrier (closer to the critical thickness) is attributed to the reduced strain.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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