High performance and highly robust AlN/GaN ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
Auteur(s) :
Harrouche, Kathia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Journal of the Electron Devices Society
Pagination :
1145-1150
Éditeur :
IEEE Electron Devices Society
Date de publication :
2019
ISSN :
2168-6734
Mot(s)-clé(s) en anglais :
GaN
HEMTs
output power density (P out )
power added efficiency (PAE)
Q-band
reliability
W-band
HEMTs
output power density (P out )
power added efficiency (PAE)
Q-band
reliability
W-band
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a ...
Lire la suite >We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at V DS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at V DS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at V DS = 20V. 24 hours RF monitoring showed no degradation during and after the test.Lire moins >
Lire la suite >We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at V DS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at V DS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at V DS = 20V. 24 hours RF monitoring showed no degradation during and after the test.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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