Title :

High PAE high reliability AlN/GaN double heterostructure

Author(s) :

Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Linge, Astrid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grimbert, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Silvestri, Riccardo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Zanoni, Enrico [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]

Journal title :

Solid-State Electronics

Pages :

49-53

Publisher :

Elsevier

Publication date :

2015-11

ISSN :

0038-1101

English keyword(s) :

AlN/GaN DHFET
Load-pull
Power-added-efficiency (PAE)
Reliability
RF power

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length ...
Show more >We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL