High Electron Confinement under High ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
Auteur(s) :
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Dogmus, Ezgi [Auteur]
Linge, Astrid [Auteur]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Dogmus, Ezgi [Auteur]
Linge, Astrid [Auteur]
Zegaoui, Malek [Auteur]
Titre de la revue :
Electronics
Pagination :
12
Éditeur :
MDPI
Date de publication :
2016
ISSN :
2079-9292
Mot(s)-clé(s) en anglais :
GaN-on-Si
high breakdown voltage
low leakage current
high breakdown voltage
low leakage current
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a ...
Lire la suite >We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipationLire moins >
Lire la suite >We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipationLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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