Title :

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Author(s) :

Goguenheim, D. [Auteur]
Bravaix, Alain [Auteur]
Vuillaume, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mondon, F. [Auteur]
Candelierd, P. [Auteur]
Jourdaine, M. [Auteur]
Meinertzhagen, A. [Auteur]

Journal title :

MICROELECTRONIC ENGINEERING

Pages :

141-144

Publisher :

Elsevier

Publication date :

1997-06

ISSN :

0167-9317

English keyword(s) :

SILC
N-MOSFET
Charge-pumping
Hole injection
Trapped charge
Interface traps

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFET's after homogeneous FOWLER-NORDHEIM injections under high field stress (<9MV/cm) for both polarities and localized ...
Show more >Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFET's after homogeneous FOWLER-NORDHEIM injections under high field stress (<9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to monitor the degradation in correlation to the Charge-Pumping (CP) technique. A systematic increase is found in SILC at low field (4–8 MV/cm) up to two orders of magnitude after FN injections and we report on the observation of SILC after localized hot hole injection. We find a correlation between the SILC increase and the interface state (Nit) generation. No trapped charge is detected in 5 nm-thick gate oxides during FN stresses but the presence of slow states is evidenced, supporting a tunneling process through neutral oxide traps as a model for SILC.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL