Title :

‘Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs’

Author(s) :

Guhel, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Hoel, Virginie [Auteur]
Werquin, M. [Auteur]
Gaquière, Christophe [Auteur]
De Jaeger, Jean-Claude [Auteur]
Poisson, M. A. [Auteur]
Daumiller, I. [Auteur]
Kohn, E. [Auteur]

Journal title :

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS

Pages :

4-6

Publisher :

Wiley

Publication date :

2002-05-21

ISSN :

0895-2477

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ...
Show more >High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperatureShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL