‘Effects of high temperature on the ...
Document type :
Article dans une revue scientifique
DOI :
Title :
‘Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs’
Author(s) :
Guhel, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Hoel, Virginie [Auteur]
Werquin, M. [Auteur]
Gaquière, Christophe [Auteur]
De Jaeger, Jean-Claude [Auteur]
Poisson, M. A. [Auteur]
Daumiller, I. [Auteur]
Kohn, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Hoel, Virginie [Auteur]

Werquin, M. [Auteur]
Gaquière, Christophe [Auteur]
De Jaeger, Jean-Claude [Auteur]

Poisson, M. A. [Auteur]
Daumiller, I. [Auteur]
Kohn, E. [Auteur]
Journal title :
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Pages :
4-6
Publisher :
Wiley
Publication date :
2002-05-21
ISSN :
0895-2477
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ...
Show more >High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperatureShow less >
Show more >High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperatureShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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