Dispersion of Heat Flux Sensors Manufactured in Silicon Technology

Ziouche, Katir; Lejeune, Pascale; Bougrioua, Zahia; Leclercq, Didier

Document type :

Article dans une revue scientifique

DOI :

10.3390/s16060853

Title :

Dispersion of Heat Flux Sensors Manufactured in Silicon Technology

Author(s) :

Ziouche, Katir [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lejeune, Pascale [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leclercq, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Sensors

Pages :

853

Publisher :

MDPI

Publication date :

2016-06

ISSN :

1424-8220

English keyword(s) :

silicon
sensor
CMOS
heat flux
thermoelectric
dispersion

HAL domain(s) :

Physique [physics]

English abstract : [en]

In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide semi-conductor) compatible 3-in technology. In particular, we ...
Show more >In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide semi-conductor) compatible 3-in technology. In particular, we have studied the performance dispersion of our sensors and linked these to the physical characteristics of dispersion of the materials used. This information is mandatory to ensure low-cost manufacturing and especially to reduce production rejects during the fabrication process. The results obtained show that the measured sensitivity of the sensors is in the range 3.15 to 6.56 μV/(W/m²), associated with measured resistances ranging from 485 to 675 kΩ. The dispersions correspond to a Gaussian-type distribution with more than 90% determined around average sensitivity Se¯ = 4.5 µV/(W/m²) and electrical resistance R¯ = 573.5 kΩ within the interval between the average and, more or less, twice the relative standard deviation.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :