AlGaN/GaN HEMTS: material, processing, and characterization

Calle, F.; Palacios, T.; Monroy, E.; Grajal, J.; Verdu, M.; Bougrioua, Zahia; Moerman, Ingrid

Document type :

Article dans une revue scientifique

DOI :

10.1023/A:1023951323307

Title :

AlGaN/GaN HEMTS: material, processing, and characterization

Author(s) :

Calle, F. [Auteur]
Palacios, T. [Auteur]
Monroy, E. [Auteur]
Nanophysique et Semiconducteurs [NPSC]
Grajal, J. [Auteur]
Verdu, M. [Auteur]
Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, Ingrid [Auteur]

Journal title :

Journal of Materials Science: Materials in Electronics

Pages :

271-277

Publisher :

Springer Verlag

Publication date :

2003-05

ISSN :

0957-4522

HAL domain(s) :

Physique [physics]

English abstract : [en]

The growth of AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by metal organic vapor phase epitaxy (MOVPE) is described, with special emphasis on procedures to reduce dislocation density. All the ...
Show more >The growth of AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by metal organic vapor phase epitaxy (MOVPE) is described, with special emphasis on procedures to reduce dislocation density. All the processing steps involved in the fabrication of nitride-based HEMTs have been optimized, including dry etching by ion beam milling, evaporation of Pt/Ti/Au gate contacts, and SiN_x surface passivation. Devices with several gate lengths and different geometries have been fabricated by standard photo- and e-beam lithography. d.c. drain current and transconductance increase when gate length is reduced, up to 950 mA/mm and 230 mS/mm, respectively, at V_GS=0 V, in HEMTs with a gate length L_G=0.2 μm. A maximum output power higher than 5 W/mm is estimated. Finally, small-signal measurements yield f_T=12 GHz and f_max=25 GHz for HEMTs with L_G=0.5 μm, which increase up to 20 and 35 GHz for L_G=0.2 μm, respectively. Limitation of high-frequency performance by parasitics is discussed.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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