Experimental Study and Device Design of ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
Auteur(s) :
Bishop, Chris [Auteur]
Georgia Tech Lorraine [Metz]
Halfaya, Yacine [Auteur]
Georgia Tech Lorraine [Metz]
Soltani, Ali [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Sundaram, Suresh [Auteur]
Georgia Tech Lorraine [Metz]
Li, Xin [Auteur]
Georgia Tech Lorraine [Metz]
Streque, Jérémy [Auteur]
Georgia Tech Lorraine [Metz]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
El Gmili, Youssef [Auteur]
Georgia Tech Lorraine [Metz]
Voss, Paul [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Georgia Tech Lorraine [Metz]
Halfaya, Yacine [Auteur]
Georgia Tech Lorraine [Metz]
Soltani, Ali [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Sundaram, Suresh [Auteur]
Georgia Tech Lorraine [Metz]
Li, Xin [Auteur]
Georgia Tech Lorraine [Metz]
Streque, Jérémy [Auteur]
Georgia Tech Lorraine [Metz]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
El Gmili, Youssef [Auteur]
Georgia Tech Lorraine [Metz]
Voss, Paul [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Titre de la revue :
IEEE Sensors Journal
Pagination :
6828-6838
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2016
ISSN :
1530-437X
Mot(s)-clé(s) en anglais :
Logic gates
HEMTs
Sensor phenomena and characterization
Wide band gap semiconductors
Aluminum gallium nitride
HEMTs
Sensor phenomena and characterization
Wide band gap semiconductors
Aluminum gallium nitride
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'environnement/Ingénierie de l'environnement
Sciences de l'environnement/Ingénierie de l'environnement
Résumé en anglais : [en]
We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, ...
Lire la suite >We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400°C. In addition, high sensitivities of up to 17% are reported for NO2, and NH3 is detected at concentrations as low as 150 ppb.Lire moins >
Lire la suite >We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400°C. In addition, high sensitivities of up to 17% are reported for NO2, and NH3 is detected at concentrations as low as 150 ppb.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
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