Title :

Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt

Author(s) :

Vu, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Jurca, H. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Maroun, F. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Allongue, P. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Tournerie, N. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

121304(R)

Publisher :

American Physical Society

Publication date :

2011

ISSN :

1098-0121

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]

English abstract : [en]

The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, ...
Show more >The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ≈ 0%.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL