Spin-dependent photoelectron tunneling ...
Document type :
Article dans une revue scientifique
Title :
Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt
Author(s) :
Vu, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Jurca, H. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Maroun, F. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Allongue, P. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Tournerie, N. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de physique de la matière condensée [LPMC]
Jurca, H. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Maroun, F. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Allongue, P. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Tournerie, N. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pages :
121304(R)
Publisher :
American Physical Society
Publication date :
2011
ISSN :
1098-0121
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, ...
Show more >The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ≈ 0%.Show less >
Show more >The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ≈ 0%.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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