Piezoresistance in Silicon at Uniaxial ...
Document type :
Article dans une revue scientifique
Title :
Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa
Author(s) :
Milne, J. [Auteur]
Favorskiy, I. [Auteur]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Renner, Ch. [Auteur]
Favorskiy, I. [Auteur]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Renner, Ch. [Auteur]
Journal title :
Physical Review Letters
Pages :
256801-1-5
Publisher :
American Physical Society
Publication date :
2012-06
ISSN :
0031-9007
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type ...
Show more >The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G/G0 increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G0 using abinitio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.Show less >
Show more >The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G/G0 increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G0 using abinitio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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