Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa

Milne, J.; Favorskiy, I.; Rowe, A.; Arscott, S.; Renner, Ch.

Document type :

Article dans une revue scientifique

DOI :

10.1103/PhysRevLett.108.256801

Title :

Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa

Author(s) :

Milne, J. [Auteur]
Favorskiy, I. [Auteur]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Renner, Ch. [Auteur]

Journal title :

Physical Review Letters

Pages :

256801-1-5

Publisher :

American Physical Society

Publication date :

2012-06

ISSN :

0031-9007

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type ...
Show more >The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G/G0 increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G0 using abinitio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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