Title :

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Author(s) :

Herth, Etienne [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
Desré, H [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Algré, Emmanuelle [Auteur]
Electronique, Systèmes de communication et Microsystèmes [ESYCOM]
Legrand, Christiane I. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lasri, Tuami [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Microelectronics Reliability

Pages :

141-146

Publisher :

Elsevier

Publication date :

2012

ISSN :

0026-2714

HAL domain(s) :

Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low ...
Show more >The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen bonds in the SiNx:H thin films were detailed. The impact of NH3, SiH4 and N2 flow ratio and radio frequency power on optical coefficients in relation to chemical composition and roughness of the film is studied. The correlation between chemical bonds (N–H, Si–H) and refractive index and extinction coefficients is systematically verified. The experimental results show that the films with high refractive indexes superior to 2.05 and low roughness of about 0.35 nm can be achieved for optoelectronics applications by tuning the flow ratio or decreasing the RF power. A variety of processes have been suggested as compatible with low thermal budget (under 350 °C) in order to integrate optical waveguides with lower loss. In particular, the incorporation of N2 as dilution gas is suited to the fabrication of SiNx:H films optical waveguide requiring low N–H bonds, low concentration of hydrogen [H] and high refractive index.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL