Title :

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Author(s) :

Duffy, Steven [Auteur]
Liverpool John Moores University [LJMU]
Benbakhti, Brahim [Auteur]
Liverpool John Moores University [LJMU]
Kalna, Karol [Auteur]
Swansea University
Boucherta, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zhang, Wei [Auteur]
China Aerospace Science and Industry Corporation [CASIC]
Bourzgui, Nour Eddine [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE ACCESS

Pages :

42721-42728

Publisher :

IEEE

Publication date :

2018

ISSN :

2169-3536

English keyword(s) :

AlGaN/GaN based devices
ohmic contact
self-heating
infrared camera
high-resolution X-ray diffraction

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

ABSTRACT Operating temperature distributions in AlGaN/GaN gateless and gated devices arecharacterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantialrise of channel temperature ...
Show more >ABSTRACT Operating temperature distributions in AlGaN/GaN gateless and gated devices arecharacterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantialrise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiationbased high-resolution X-ray diffraction technique combined with drift–diffusion simulations show that strainreduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the riseof lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a lowconductive channel region is an origin of the temperature rise observed in both short- and long-channelgateless devices.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL