Title :

InP double heterojunction bipolar transistors for terahertz computed tomography

Author(s) :

Coquillat, Dominique [Auteur]
Laboratoire Charles Coulomb [L2C]
Duhant, Alexandre [Auteur]
Image & Interaction [ICAR]
Terakalis
Triki, Meriam [Auteur]
Terakalis
Nodjiadjim, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Konczykowska, Agnieszka [Auteur]
Alcatel-Thalès III-V lab [III-V Lab]
Riet, Muriel [Auteur]
Alcatel-Thalès III-V lab [III-V Lab]
Dyakonova, Nina [Auteur]
Laboratoire Charles Coulomb [L2C]
Strauss, Olivier [Auteur]
Image & Interaction [ICAR]
Knap, Wojciech [Auteur]
Laboratoire Charles Coulomb [L2C]

Journal title :

Aip Advances

Pages :

#085320

Publisher :

American Institute of Physics- AIP Publishing LLC

Publication date :

2018-08

ISSN :

2158-3226

HAL domain(s) :

Sciences de l'ingénieur [physics]/Automatique / Robotique

English abstract : [en]

We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and ...
Show more >We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL