Electrical detection of plasmon-induced ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Electrical detection of plasmon-induced isomerization in molecule–nanoparticle network devices
Author(s) :
Stiévenard, Didier [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lenfant, Stephane [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leveque, Gaetan [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nijhuis, Christian A. [Auteur]
National University of Singapore [NUS]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]

Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lenfant, Stephane [Auteur]

Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leveque, Gaetan [Auteur]

Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nijhuis, Christian A. [Auteur]
National University of Singapore [NUS]
Vuillaume, Dominique [Auteur]

Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Nanoscale
Pages :
23122-23130
Publisher :
Royal Society of Chemistry
Publication date :
2018-12-13
ISSN :
2040-3364
HAL domain(s) :
Physique [physics]
Physique [physics]/Matière Condensée [cond-mat]
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene ...
Show more >We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene derivatives (azobenzene bithiophene : AzBT). We show that PII is more efficient in a 3D-like (cluster-NPSAN) than in a purely two-dimensional NPSAN (i.e., a monolayer of AzBT functionalized Au NPs). By comparison with usual optical (UV-visible light) isomerization of AzBT, the PII shows a faster (a factor about 10) isomerization kinetics. Possible PII mechanisms are discussed: electric field-induced isomerization, two-phonon process, plasmon-induced resonant energy transfer (PIRET), the latter being the most likely.Show less >
Show more >We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene derivatives (azobenzene bithiophene : AzBT). We show that PII is more efficient in a 3D-like (cluster-NPSAN) than in a purely two-dimensional NPSAN (i.e., a monolayer of AzBT functionalized Au NPs). By comparison with usual optical (UV-visible light) isomerization of AzBT, the PII shows a faster (a factor about 10) isomerization kinetics. Possible PII mechanisms are discussed: electric field-induced isomerization, two-phonon process, plasmon-induced resonant energy transfer (PIRET), the latter being the most likely.Show less >
Language :
Anglais
Popular science :
Non
Comment :
Final manuscript with supporting information
Source :
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