Title :

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Author(s) :

Chicot, Gauthier [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Fiori, Alexandre [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Volpe, P.N. [Auteur]
Laboratoire Capteurs Diamant (CEA, LIST) [LCD (CEA, LIST)]
Tran Thi, Thu Nhi [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Gerbedoen, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bousquet, Jessica [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Alegre, M.P. [Auteur]
Pinero, J.C. [Auteur]
Araujo, D. [Auteur]
Jomard, F. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Morse, J. [Auteur]
European Synchrotron Radiation Facility [ESRF]
Härtwig, J. [Auteur]
European Synchrotron Radiation Facility [ESRF]
Tranchant, Nicolas [Auteur]
Laboratoire Capteurs Diamant (CEA, LIST) [LCD (CEA, LIST)]
Mer-Calfati, C. [Auteur]
Laboratoire Capteurs Diamant (CEA, LIST) [LCD (CEA, LIST)]
Arnault, Jean-Charles [Auteur]
Laboratoire Capteurs Diamant (CEA, LIST) [LCD (CEA, LIST)]
Delahaye, Julien [Auteur]
Magnétisme et Supraconductivité [NEEL - MagSup]
Grenet, Thierry [Auteur]
Magnétisme et Supraconductivité [NEEL - MagSup]
Eon, David [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Omnès, Franck [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Pernot, Julien [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Bustarret, Etienne [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]

Journal title :

Journal of Applied Physics

Pages :

083702

Publisher :

American Institute of Physics

Publication date :

2014

ISSN :

0021-8979

English keyword(s) :

carrier density
diamond
boron
carrier mobility
doping

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux

English abstract : [en]

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single ...
Show more >Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

ANR Project :

Manufacture and study of ultra-thin films of highly boron-doped single crystal diamond

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL