Title :

Neutron irradiation effects on the electrical properties of previously electrically stressed AlInN/GaN HEMTs

Author(s) :

Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Trolet, J. [Auteur]
Mary, P. [Auteur]
Ecole des applications militaires de l'énergie atomique [EAMEA]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Petitdidier, Sébastien [Auteur]

Journal title :

IEEE Transactions on Nuclear Science

Pages :

810 - 819

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2019-05

ISSN :

0018-9499

English keyword(s) :

Neutrons
Radiation effects
Stress
HEMTs
MODFETs
Thermal stresses
Electron traps
Reliability
Neutron irradiation effects
Electrical stress
AlInN/GaN HEMTs

HAL domain(s) :

Sciences de l'ingénieur [physics]
Physique [physics]

English abstract : [en]

This paper analyses the neutron irradiation impact on the electrical performances of unstressed, on-state, off-state and Negative Gate Bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation ...
Show more >This paper analyses the neutron irradiation impact on the electrical performances of unstressed, on-state, off-state and Negative Gate Bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an increase in the access resistance of the unstressed, on-state or off-state stressed AlInN/GaN devices. These degradations have been correlated with gamma spectrometry measurements and transmutation reactions occurred during the thermalized neutron irradiation have been highlighted. Despite these phenomena, a rise in drain current and a reduction in access resistance have been observed when NGB stressed AlInN/GaN HEMTs were irradiated with a fluence of 1.2x1012 neutrons/cm2. The differences between the electrical behaviors of unstressed, on-state, off-state, and NGB stressed devices observed after the neutron bombardment are related to the presence of electron traps in these device structures.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL