Title :

Conception and realization of highly selective bandpass filters in Ka-band built on thin polymer films

Author(s) :

El Gibari, Mohammed [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Bretin, Sara [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Derval, Patrick [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Ginestar, Stéphane [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Lirzin, Guillaume [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Li, Hong Wu [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]

Conference title :

International Conference on Microelectronics

City :

Beirut

Country :

Liban

Start date of the conference :

2017-12-10

Publication date :

2017-12

English keyword(s) :

Band-pass filters
Ka-band
Thin films
BCB polymer
Via-free microstrip-coplanar transitions
Low insertion losses

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A novel structure of high performance narrow bandpassfilters on thin polymer film is reported in this paper. It’scomposed of two microstrip resonators placed between two viafreemicrostrip–grounded coplanar waveguide ...
Show more >A novel structure of high performance narrow bandpassfilters on thin polymer film is reported in this paper. It’scomposed of two microstrip resonators placed between two viafreemicrostrip–grounded coplanar waveguide transitions. Itcombines therefore compactness, low-cost, fabrication easiness ofmicrostrip lines and connection facility of coplanar pads. Narrowband-pass filters have been optimized by using HFSS software,realized and characterized, over the range of Ka-bandfrequencies. With the band-pass filter realized on thin BCBpolymer (benzocyclobutene, relative permittivity er = 2.65 andloss tangent tanδ = 0.0025) film of 60 μm thick, the performanceobtained for a center frequency optimized at 30.5 GHz is 28.8 forquality factor and -1.4 dB for insertion losses, with very goodagreement between simulation and experiment results.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL