Uniformity improvement of linear power pHEMTs using a very high selective wet etching

Hue, X.; Boudart, B.; Bonte, B.; Crosnier, Y.

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1002/(SICI)1098-2760(19991105)23:3<192::AID-MOP18>3.0.CO;2-5

Title :

Uniformity improvement of linear power pHEMTs using a very high selective wet etching

Author(s) :

Hue, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bonte, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Crosnier, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS

Pages :

192 - 194

Publisher :

Wiley

Publication date :

1999-11-05

ISSN :

0895-2477

HAL domain(s) :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both ...
Show more >The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The linearity is confirmed by a quasiflat profile of the transconductance and of the maximum available gain (MAG) over a wide gate source voltage. Power and intermodulation distortion measurements at 16 GHz have been performed. An IP3 value of 25 dBm has been obtained for a 2×75 μm device.Show less >

Language :

Anglais

Popular science :

Non

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