Influence of plasma treatments and SnO2 ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...)
Title :
Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition
Author(s) :
Maertens, Alban [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Margueron, Samuel [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Genty, Frédéric [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Abrutis, Adulfas [Auteur]
Belmonte, Thierry [Auteur]
Institut Jean Lamour [IJL]
Boulet, Pascal [Auteur]
Institut Jean Lamour [IJL]
Ghanbaja, Jaafar [Auteur]
Institut Jean Lamour [IJL]
Talbi, Abdelkrim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bartasyte, Ausrine [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Margueron, Samuel [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Genty, Frédéric [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Abrutis, Adulfas [Auteur]
Belmonte, Thierry [Auteur]
Institut Jean Lamour [IJL]
Boulet, Pascal [Auteur]
Institut Jean Lamour [IJL]
Ghanbaja, Jaafar [Auteur]
Institut Jean Lamour [IJL]
Talbi, Abdelkrim [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bartasyte, Ausrine [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
Conference title :
Compound Semicondcutor Week 2016
City :
Toyama
Country :
Japon
Start date of the conference :
2016-06-27
HAL domain(s) :
Sciences de l'ingénieur [physics]/Matériaux
English abstract : [en]
Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 ...
Show more >Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C samples while UV transparency was high. This contradicts the literature works on the effect of Sn4+ doping in films obtained by other methods. Besides, X-ray diffraction patterns showed the epitaxial stabilization of a new phase. The films treated by radio-frequency plasma (hydrogen and argon) presented a decrease in transparency and an increase in conductivity. The conductivity also depended on the SnO2 concentration. The hydrogen doping levels as well as polarons (due to oxygen non-stoichiometry) are suspected to play a role on the conductivity mechanism.Show less >
Show more >Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C samples while UV transparency was high. This contradicts the literature works on the effect of Sn4+ doping in films obtained by other methods. Besides, X-ray diffraction patterns showed the epitaxial stabilization of a new phase. The films treated by radio-frequency plasma (hydrogen and argon) presented a decrease in transparency and an increase in conductivity. The conductivity also depended on the SnO2 concentration. The hydrogen doping levels as well as polarons (due to oxygen non-stoichiometry) are suspected to play a role on the conductivity mechanism.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :