Title :

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Author(s) :

Herbecq, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roch-Jeune, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014

City :

Delphi

Country :

Grèce

Start date of the conference :

2014

Book title :

Proceedings of 38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014

Publication date :

2014

English abstract : [en]

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer ...
Show more >We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-terminal breakdown voltage increased from 750 V to 1900 V for a gate-drain distance of 15 μm despite the very high 2DEG density (2.3×10^13cm-2). Extremely low specific on-resistance (1.6 mΩ.cm²) was maintained by keeping the trenches narrow in order to avoid a strong degradation of the thermal dissipation.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL