Optomechanical interactions in two-dimensional ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Optomechanical interactions in two-dimensional Si and GaAs phoXonic cavities
Author(s) :
El-Jallal, Said [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Oudich, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pennec, Yan [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Djafari-Rouhani, Bahram [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Makhoute, A. [Auteur]
Rolland, Quentin [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dupont, Samuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gazalet, Joseph [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Oudich, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pennec, Yan [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Djafari-Rouhani, Bahram [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Makhoute, A. [Auteur]
Rolland, Quentin [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dupont, Samuel [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gazalet, Joseph [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Journal of Physics: Condensed Matter
Pages :
015005, 12 pages
Publisher :
IOP Publishing [1989-....]
Publication date :
2014
ISSN :
0953-8984
English abstract : [en]
We investigate theoretically the optomechanical interactions inside cavities created in two-dimensional infinite phoXonic crystals constituted by a square array of holes in silicon (Si) and gallium arsenide (GaAs) matrices. ...
Show more >We investigate theoretically the optomechanical interactions inside cavities created in two-dimensional infinite phoXonic crystals constituted by a square array of holes in silicon (Si) and gallium arsenide (GaAs) matrices. The cavity is simply obtained by removing one hole in the perfect crystal. Our calculations take into account two mechanisms that contribute to the optomechanical coupling, namely the bulk photoelastic effect and the deformations of the interfaces due to the acoustic strain. The coupling strength is estimated by two different methods, modulation of the photonic mode frequency during one period of the acoustic oscillations and calculation of the optomechanical coupling rate. We discuss the important roles of the symmetry and degeneracy of the modes to discriminate which ones are not able to interact efficiently. Calculations in Si and GaAs crystals at different optical wavelengths emphasize the dependence of the photoelastic contribution to the optomechanical interaction as a function of material and wavelength, especially owing to the significant variation of the photoelastic coefficients near the semiconductor band gap.Show less >
Show more >We investigate theoretically the optomechanical interactions inside cavities created in two-dimensional infinite phoXonic crystals constituted by a square array of holes in silicon (Si) and gallium arsenide (GaAs) matrices. The cavity is simply obtained by removing one hole in the perfect crystal. Our calculations take into account two mechanisms that contribute to the optomechanical coupling, namely the bulk photoelastic effect and the deformations of the interfaces due to the acoustic strain. The coupling strength is estimated by two different methods, modulation of the photonic mode frequency during one period of the acoustic oscillations and calculation of the optomechanical coupling rate. We discuss the important roles of the symmetry and degeneracy of the modes to discriminate which ones are not able to interact efficiently. Calculations in Si and GaAs crystals at different optical wavelengths emphasize the dependence of the photoelastic contribution to the optomechanical interaction as a function of material and wavelength, especially owing to the significant variation of the photoelastic coefficients near the semiconductor band gap.Show less >
Language :
Anglais
Popular science :
Non
Source :