High performance AlGaN metal-semiconductor-metal ...
Document type :
Article dans une revue scientifique
Title :
High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors
Author(s) :
Benzeghda, Sabah [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
International Journal of Engineering Sciences and Research Technology
Pages :
3333-3336
Publication date :
2013
English keyword(s) :
Photodetector
MSM
ultraviolet Schottky barrier photodetectors
MSM
ultraviolet Schottky barrier photodetectors
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark ...
Show more >In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimentalresultsShow less >
Show more >In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimentalresultsShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :