Modelling and engineering of stress based ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning
Author(s) :
Han, Xiang-Lei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur correspondant]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur correspondant]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Krzeminski, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Nanotechnology
Pages :
495301
Publisher :
Institute of Physics
Publication date :
2013-11-14
ISSN :
0957-4484
Keyword(s) :
ingénerie
transistors verticaux ultimes
modelisation
oxydation du silicium
nanofils
transistors verticaux ultimes
modelisation
oxydation du silicium
nanofils
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. ...
Show more >Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. Here, we investigate stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) both at the experimental and theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. A complex dependence of the stress build-up with the nanoobjects dimension, shape and size have been demonstrated experimentally and physically explained by modelling. For the oxidation of a two dimensional nanostructure (nanobeam), a relative independence to size effects have been observed. On the other side, a radial stress increase with geometry downscaling of one dimensional nanostructure (nanowire) have been carefully emphasised. The study of the shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.Show less >
Show more >Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. Here, we investigate stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) both at the experimental and theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. A complex dependence of the stress build-up with the nanoobjects dimension, shape and size have been demonstrated experimentally and physically explained by modelling. For the oxidation of a two dimensional nanostructure (nanobeam), a relative independence to size effects have been observed. On the other side, a radial stress increase with geometry downscaling of one dimensional nanostructure (nanowire) have been carefully emphasised. The study of the shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.Show less >
Language :
Anglais
Popular science :
Non
Comment :
Rapport LAAS N°13389
Source :
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