Effect of residual stress on energy storage ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations
Auteur(s) :
Ge, J. [Auteur]
Shanghai Institute of Ceramics
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Costecalde, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Y. [Auteur]
Shanghai Institute of Ceramics
Dong, X.L. [Auteur]
Shanghai Institute of Ceramics
Wang, G.S. [Auteur]
Shanghai Institute of Ceramics
Shanghai Institute of Ceramics
Remiens, Denis [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Costecalde, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Y. [Auteur]
Shanghai Institute of Ceramics
Dong, X.L. [Auteur]
Shanghai Institute of Ceramics
Wang, G.S. [Auteur]
Shanghai Institute of Ceramics
Titre de la revue :
Applied Physics Letters
Pagination :
162903
Éditeur :
American Institute of Physics
Date de publication :
2013
ISSN :
0003-6951
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for ...
Lire la suite >The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations.Lire moins >
Lire la suite >The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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