Contribution of the buffer layer to the ...
Document type :
Article dans une revue scientifique
Title :
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Author(s) :
Fromm, F. [Auteur]
Oliveira, M.H. [Auteur]
Molina-Sanchez, A. [Auteur]
Hundhausen, M. [Auteur]
Lopes, J.M.J. [Auteur]
Riechert, H. [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seyller, T. [Auteur]
Oliveira, M.H. [Auteur]
Molina-Sanchez, A. [Auteur]
Hundhausen, M. [Auteur]
Lopes, J.M.J. [Auteur]
Riechert, H. [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seyller, T. [Auteur]
Journal title :
New Journal of Physics
Pages :
043031-1-11
Publisher :
Institute of Physics: Open Access Journals
Publication date :
2013
ISSN :
1367-2630
English keyword(s) :
Graphene
silicon carbide
buffer layer
phonons
Raman spectroscopy
abinitio calculations
vibrational density of states
silicon carbide
buffer layer
phonons
Raman spectroscopy
abinitio calculations
vibrational density of states
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to ...
Show more >We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.Show less >
Show more >We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :
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