Title :

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Author(s) :

Fromm, F. [Auteur]
Oliveira, M.H. [Auteur]
Molina-Sanchez, A. [Auteur]
Hundhausen, M. [Auteur]
Lopes, J.M.J. [Auteur]
Riechert, H. [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seyller, T. [Auteur]

Journal title :

New Journal of Physics

Pages :

043031-1-11

Publisher :

Institute of Physics: Open Access Journals

Publication date :

2013

ISSN :

1367-2630

English keyword(s) :

Graphene
silicon carbide
buffer layer
phonons
Raman spectroscopy
abinitio calculations
vibrational density of states

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to ...
Show more >We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL