Title :

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Author(s) :

Schutz-Kuchly, T. [Auteur]
Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie [ICube]
Slaoui, A. [Auteur]
Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie [ICube]
Zelgowski, J. [Auteur]
Bahouka, A. [Auteur]
Pawlik, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delbos, E. [Auteur]
Bouttemy, M. [Auteur]
Institut Lavoisier de Versailles [ILV]
Cabal, R. [Auteur]

Conference title :

4th Photovoltaic Technical Conference, PVTC 2013, ''Thin Film and Advanced Silicon Solutions 2013''

City :

Aix-en-Provence

Country :

France

Start date of the conference :

2013

Journal title :

EPJ Photovoltaics

Publication date :

2014

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results ...
Show more >Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration) but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration), however a-Si:H flakes and Al2O3 lace remain after ablation process.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL