Long wavelength determination of a strained ...
Document type :
Communication dans un congrès avec actes
Title :
Long wavelength determination of a strained quantum well structure based on GaxIn1-x-yAsySb1-y/GaSb for gas detection
Author(s) :
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nacer, Said [Auteur]
Aliane, H. [Auteur]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nacer, Said [Auteur]
Aliane, H. [Auteur]
Vilcot, Jean-Pierre [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
Saudi International Electronics, Communications and Photonics Conference, SIECPC 2011
City :
Riyadh
Country :
Arabie Saoudite
Start date of the conference :
2011
Book title :
Proceedings of 2011 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2011
Publication date :
2011
English keyword(s) :
Substrates
Gallium
Diode lasers
Gas lasers
Quantum well lasers
Gallium
Diode lasers
Gas lasers
Quantum well lasers
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band ...
Show more >In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2-3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectorsShow less >
Show more >In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2-3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectorsShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :