Title :

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Author(s) :

Sellier, Hermann [Auteur]
Nano-Electronique Quantique et Spectroscopie [NEEL - QuNES]
Hackens, B. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Pala, M. G. [Auteur]
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
Martins, F. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Baltazar, S. [Auteur]
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Desplanque, Ludovic [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bayot, Vincent [Auteur]
Nano-Optique et Forces [NEEL - NOF]
Huant, Serge [Auteur]
Nano-Optique et Forces [NEEL - NOF]

Journal title :

Semiconductor Science and Technology

Pages :

064008

Publisher :

IOP Publishing

Publication date :

2011-06

ISSN :

0268-1242

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

English abstract : [en]

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical ...
Show more >This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarize a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low-magnetic-field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip-induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL