V-Band Amplifier MMICs Using Multi-Finger ...
Document type :
Communication dans un congrès avec actes: Autre communication scientifique (congrès sans actes - poster - séminaire...)
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Title :
V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology
Author(s) :
Godin, J. [Auteur]
Nodjiadjim, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Riet, M. [Auteur]
Berdaguer, P. [Auteur]
Piotrowicz, S. [Auteur]
Jardel, Olivier [Auteur]
C2S2
Scavennec, A. [Auteur]
Nallatamby, Jean-Christophe [Auteur]
C2S2
Gaquière, C. [Auteur]
Nodjiadjim, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Riet, M. [Auteur]
Berdaguer, P. [Auteur]
Piotrowicz, S. [Auteur]
Jardel, Olivier [Auteur]
C2S2
Scavennec, A. [Auteur]
Nallatamby, Jean-Christophe [Auteur]
C2S2
Gaquière, C. [Auteur]
Conference title :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
City :
Greensboro - Caroline du Nord
Country :
Etats-Unis d'Amérique
Start date of the conference :
2009-10-11
Book title :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Publication date :
2009
English abstract : [en]
We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, ...
Show more >We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.Show less >
Show more >We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
Submission date :
2021-07-27T16:39:36Z